Description
1NT251
Four Separate N-P-N Silicon Transistors.
Produced in 1989
Each transistor has parameters:
Ueb |
Ucb | Uce | Ik | Ptot | h21e | Fmax | ft |
V | V | V | A | W | dB | MHz | |
45 | 0.4 | 0.4 |
>30
|
200 |
- Code: S121017
- Manufacturer: USSR