USSR

K140UD7 = µA741H = MC1741G = LM741H = SN72741L

Operational Amplifier

1NT251

Four Separate N-P-N Silicon Transistors.

Produced in 1989

Each transistor has parameters:

2TS622A

Four Separate P-N-P Silicon Transistors.

Produced in 1988

Each transistor has parameters:

12J1L = 12Z1L = 12SH1L 

2J27L = 2Z27L = 2SH27L 

Vacuum Pentode, Intended for RF Amplifiers up to 120 MHz for Units with Battery Power.

740UD5-1 = LM101

Operational Amplifier Without Body.

PULSE TRANSFORMER  FOR POWER UNIT OF THE RADIOSTATION R-173

R-4

Discharger. 

RES47

RF4.500.407-02.04

Hermetically sealed relays type DPDT

Rated Coil Voltage                        27 V

Rated Coil Resistance                 165 ohm

Operate (set) time                          < 5 ms

Max. Switching Voltage (DC)       150 V

Max. Switching Current (DC)        3.0 A

Max. Contact Resistance              0.6 ohm

Contact material            AgMgNi-99 and Ag999

RES15

RS4.591.003

Relays type SPDT

Rated Coil Current                           30 mA

Rated Coil Resistance                 330 ohm

Operate (set) time                          < 8 ms

Max. Switching Voltage (DC)       127 V

Max. Switching Current (DC)        0.15 A

Max. Contact Resistance              1.0 ohm

Contact material                      AgMgNiZr-99